S2PAM13 - 13. Studentská vědecká konference fyziky pevných látek, fotoniky a materiálů

MOVPE grown AlGaN layers on sapphire substrates for UV applications

4. 9. 2024 14:25

25min

Pension Kamínek

Preparation techniques and analysis

Přednášející

Jan Batysta (FJFI KIPL/ FZU CAS)

Popis

Multiple applications (like LEDs) require growing high crystalline quality buffer layers before active region. These are the layers at the very bottom of structures, where on the boundary between sapphire and nitride many dislocations are created due to large lattice mismatch. It is important to improve the crystalline quality in this buffer layer, so that the active region has high internal quantum efficiency. We present preliminary results of AlGaN grown on sapphire with thin 3D GaN nucleation and coalescence layers.